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FDC608PZ

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.8A, 30mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDC608PZ
Datasheet:

FDC608PZ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDC608PZ

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDC608PZ General Description

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery power circuits, and DC/DC conversions.

Key Features

-5.8A, -20V, R_DS(on) = 30mΩ @ V_GS = -4.5V R_DS(on) = 43mΩ @ V_GS = -2.5V
Low gate charge
High performance trench technology for extremely low R_DS(on)
SuperSOT^™ ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick)

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	FDC608PZ	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	56 Weeks
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	5.8 A	Drain-source On Resistance-Max	0.043 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	1.6 W
Pulsed Drain Current-Max (IDM)	20 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Element Material	SILICON