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FDC5612 +BOM
N-Channel PowerTrench® MOSFET 60V 4.3A, 55mΩ
TSOT-23-6-
Manufacturer:
-
Mfr.Part #:
FDC5612
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Datasheet:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Active
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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EDA/CAD Models:
Availability: 7072 PCS
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FDC5612 General Description
The FDC5612 N-Channel MOSFET offers unparalleled efficiency and performance for DC/DC converter applications. Its innovative design features faster switching speeds and lower gate charge, making it easier and safer to drive even at very high frequencies. These characteristics result in higher overall efficiency for power supply designs, ultimately leading to energy savings and improved system reliability. By incorporating the FDC5612 MOSFET into their designs, engineers can achieve superior performance and efficiency in their DC/DC converter circuits, making it an ideal choice for a wide range of applications
Key Features
- 4.3 A, 60 V. RDS(ON) = 0.055 Ω@ VGS = 10 V
- RDS(ON) = 0.064 Ω @ VGS = 6 V
- Low gate charge (12.5nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
Application
- This product is general usage and suitable for many different applications.
Specifications
Source Content uid | FDC5612 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (ID) | 4.3 A |
Drain-source On Resistance-Max | 0.055 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G6 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 1.6 W |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDC5612, guaranteed quotes back within 12hr.