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See Technical Specifications

FDC365P

The FDC365P is a P-Channel Power Trench® MOSFET that operates at -35V and can handle -4.3A of current with an on-resistance of 55mΩ

Manufacturer:

Onsemi
Mfr.Part #:

FDC365P
Datasheet:

FDC365P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDC365P

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDC365P General Description

This P-Channel MOSFET has been produced using a proprietary PowerTrench^® technology to deliver low r_DS(on) and optimized BV_dss capability to offer superior performance benefit in the applications.

Key Features

Max r_DS(on) = 55mΩ at V_GS = 10V, I_D = -4.2A
Max r_DS(on) = 80mΩ at V_GS = -4.5V, I_D = -3.2A
RoHS compliant

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	35 V
Id - Continuous Drain Current	4.3 A	Rds On - Drain-Source Resistance	55 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	15 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.6 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDC365P	Configuration	Single
Fall Time	3 ns	Height	1.1 mm
Length	2.9 mm	Product	MOSFET Small Signal
Product Type	MOSFET	Rise Time	3 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	7 ns	Width	1.6 mm
Unit Weight	0.001270 oz