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FDC3535 +BOM
High-voltage P-channel MOSFET in PowerTrench technology
SSOT-6-
Manufacturer:
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Mfr.Part #:
FDC3535
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
P-Channel
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Number of Channels:
1 Channel
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EDA/CAD Models:
Availability: 5116 PCS
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FDC3535 General Description
This P-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Key Features
- Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
- Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely usedsurface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS Compliant
Application
- This product is general usage and suitable for many different applications.
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 2.1 A | Rds On - Drain-Source Resistance | 147 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 14 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.6 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDC3535 | Configuration | Single |
Forward Transconductance - Min | 6.3 S | Height | 1.1 mm |
Length | 2.9 mm | Product | MOSFET Small Signal |
Product Type | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Width | 1.6 mm | Unit Weight | 0.001270 oz |
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In Stock: 5,116
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for FDC3535, guaranteed quotes back within 12hr.