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FDC3535 +BOM

High-voltage P-channel MOSFET in PowerTrench technology

FDC3535 General Description

This P-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Key Features

  • Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
  • Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely usedsurface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 2.1 A Rds On - Drain-Source Resistance 147 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 14 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.6 W
Channel Mode Enhancement Tradename PowerTrench
Series FDC3535 Configuration Single
Forward Transconductance - Min 6.3 S Height 1.1 mm
Length 2.9 mm Product MOSFET Small Signal
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Width 1.6 mm Unit Weight 0.001270 oz

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