This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

CSD19538Q3A +BOM

100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm

Manufacturer:

TI
Mfr.Part #:

CSD19538Q3A
Datasheet:

CSD19538Q3A Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for CSD19538Q3A

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

CSD19538Q3A General Description

This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.

Key Features

Ultra-Low Q_g and Q_gd
Low-Thermal Resistance
Avalanche Rated
Lead Free
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package

Specifications

Source Content uid	CSD19538Q3A	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Date Of Intro	2016-06-02	Additional Feature	AVALANCHE RATED
Avalanche Energy Rating (Eas)	8.1 mJ	Case Connection	DRAIN
Configuration	SINGLE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	4.9 A	Drain-source On Resistance-Max	0.072 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	16.4 pF
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	36 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	14.4 A	Rds On - Drain-Source Resistance	61 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3.2 V
Qg - Gate Charge	4.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.8 W
Channel Mode	Enhancement	Tradename	NexFET
Series	CSD19538Q3A	Fall Time	2 ns
Height	0.9 mm	Length	3.15 mm
Product Type	MOSFET	Rise Time	3 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	7 ns
Typical Turn-On Delay Time	5 ns	Width	3 mm
Unit Weight	0.000963 oz

Service Policies and Others

After-Sales & Settlement Related

Payment

Payment Method

TT/Wire Transfer

Paypal

Western Union

Money Gram

For alternative payment channels, please reach out to us at:

[email protected]

Shipping & Packing

Shipping Method

Fedex

UPS

DHL

NTN

Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

Quality Guarantee

We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

M**n 05/17/2024

The goods are satisfied!

J**o 06/21/2021

Avaq truly impressed me with their quick delivery and exceptional customer service. The LAN8710A-EZC components are the real deal. I give them five stars!

S**h 06/11/2021

Avaq's attention to detail and prompt delivery of the THGAF8G9T43BAIR electronic components deserve applause. The components arrived intact and on time, ensuring a hassle-free experience.

T**r 07/25/2020

10 pairs of connectors with wires received. It's okay, we'll use it.