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See Technical Specifications

MJ21193G

Bipolar Transistor, PNP, 250 V, 16 A

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MJ21193G
Datasheet:

MJ21193G Datasheet (PDF)
Case Outline:

1-07
MSL Temp (°C):

0
Container Type:

FTRAY
EDA/CAD Models:

Request Free CAD Models for MJ21193G

Email: [email protected]

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Tel: +852 95804164

MJ21193G General Description

The MJ21193G is a bipolar junction transistor (BJT) with an NPN (negative-positive-negative) configuration. It is designed to handle high voltages and currents, making it suitable for demanding applications that require power amplification and switching.

MJ21193G Schematic

MJ21193G Marking Diagram

Key Features

Total Harmonic Distortion Characterized
High DC Current Gain ->
Excellent Gain Linearity
High SOA: 2.5 A, 80 V, 1 Second
Pb-Free Packages are Available

MJ21193G Datasheet PDF

Download MJ21193G Datasheet PDF here>>

Application

Power Amplifiers: It is suitable for audio power amplifier designs, where it can drive large speakers and deliver high-quality sound output.
Switching Power Supplies: The transistor can be employed in switch-mode power supply circuits, enabling efficient voltage conversion and regulation.
Motor Control: It can be used in motor control circuits, driving high-current loads in applications such as industrial machinery, robotics, and automotive systems.
High-Power Lighting: The MJ21193G is utilized in high-power lighting systems, such as high-intensity discharge (HID) lamps and LED drivers.
RF Amplifiers: In RF power amplifier designs, it can be used to amplify RF signals in applications like radio transmitters and broadcast equipment.

MJ21193G Package Dimensions

MJ21193G Package Dimensions