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See Technical Specifications

C3M0280090D

Trans MOSFET N-CH 900V 10.2A 3-Pin(3+Tab) TO-247

Manufacturer:

WOLFSPEED, INC
Mfr.Part #:

C3M0280090D
Datasheet:

C3M0280090D Datasheet (PDF)
Series:

C3M™
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):

900 V
EDA/CAD Models:

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C3M0280090D General Description

Mosfet, N-Ch, 900V, 11.5A, To-247; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:900V; No. Of Pins:3Pins; Rds(On) Test Voltage:15V; Power Dissipation:54W Rohs Compliant: Yes |Wolfspeed C3M0280090D

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	C3M™
FET Type	N-Channel	Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	900 V	Current - Continuous Drain (Id) @ 25°C	11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V	Rds On (Max) @ Id, Vgs	360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id	3.5V @ 1.2mA	Gate Charge (Qg) (Max) @ Vgs	9.5 nC @ 15 V
Vgs (Max)	+18V, -8V	Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 600 V
FET Feature	-	Power Dissipation (Max)	54W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	C3M0280090	Pin Count	3
Released Date	Mar 29, 2017	Last Modified Date	Mar 7, 2023 4:10 PM UTC