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See Technical Specifications

BUK768R3-60E +BOM

N-channel TrenchMOS standard level FET

Manufacturer:

NXP
Mfr.Part #:

BUK768R3-60E
Datasheet:

BUK768R3-60E Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED
EDA/CAD Models:

Request Free CAD Models for BUK768R3-60E

Email: [email protected]

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Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable BUK768R3-60E driver, produced by NXP. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the BUK768R3-60E.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Source Content uid	BUK768R3-60E	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	86 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	75 A
Drain-source On Resistance-Max	0.0083 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	349 A	Reference Standard	AEC-Q101; IEC-60134
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON