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BSC030P03NS3GAUMA1

MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3

Avaq Semiconductor offers the highly versatile and reliable BSC030P03NS3GAUMA1 driver, produced by INFINEON. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the  BSC030P03NS3GAUMA1.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Source Content uid BSC030P03NS3GAUMA1 Pbfree Code No
Part Life Cycle Code Active Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 345 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 25.4 A Drain-source On Resistance-Max 0.0046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 520 pF
JESD-30 Code R-PDSO-N8 JESD-609 Code e3
Moisture Sensitivity Level 3 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 200 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN
Terminal Form NO LEAD Terminal Position DUAL
Transistor Application SWITCHING Transistor Element Material SILICON
Turn-off Time-Max (toff) 197 ns Turn-on Time-Max (ton) 199 ns
Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 100 A Rds On - Drain-Source Resistance 3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.1 V
Qg - Gate Charge 140 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 125 W
Channel Mode Enhancement Series BSC030P03
Fall Time 33 ns Forward Transconductance - Min 47 S
Height 1.27 mm Length 5.9 mm
Moisture Sensitive Yes Product Type MOSFET
Rise Time 105 ns Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 98 ns Typical Turn-On Delay Time 27 ns
Width 5.15 mm Part # Aliases BSC030P03NS3 G SP000442470
Unit Weight 0.003683 oz

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Availability: 34340 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $1.759 $1.76
10+ $1.516 $15.16
30+ $1.362 $40.86
100+ $1.205 $120.50
500+ $1.134 $567.00
1000+ $1.103 $1,103.00

The prices below are for reference only.