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BLF178P,112

1.2kW SOT-539A MOSFETs RoHS

BLF178P,112 General Description

RF Mosfet 50 V 40 mA 108MHz 28.5dB 1200W SOT539A

blf178p-112

Specifications

ECCN (US) EAR99 Part Status Active
Configuration Dual Common Source Channel Mode Enhancement
Channel Type N Number of Elements per Chip 2
Mode of Operation CW|Pulsed RF Process Technology LDMOS
Maximum Drain Source Voltage (V) 110 Maximum Gate Source Voltage (V) 11
Maximum VSWR 13 Maximum Continuous Drain Current (A) 88
Maximum Drain Source Resistance (mOhm) 70(Typ)@6V Typical Input Capacitance @ Vds (pF) 403@50V
Output Power (W) 1200 Typical Power Gain (dB) 28.5
Maximum Frequency (MHz) 110 Minimum Frequency (MHz) 10
Typical Drain Efficiency (%) 75 Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 225 Packaging Bulk
Mounting Screw PCB changed 5
Pin Count 5

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O
O**a 09/27/2021

Good product & fast sheeping, Recommanded

18

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Availability: 7873 PCS

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