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2SK1489(Q) +BOM

2SK1489(Q) is a N-Channel MOSFET with a maximum voltage of 1000V and a maximum current of 12A in TO-3PL package

Manufacturer:

Toshiba
Mfr.Part #:

2SK1489(Q)
Datasheet:

2SK1489(Q) Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2SK1489(Q)

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Tel: +852 95804164

2SK1489(Q) General Description

Operating at a maximum power dissipation of 200W, the 2SK1489(Q) offers high performance in a compact package. With a lead spacing of 5.45mm and a single transistor design, this MOSFET is easy to integrate into your existing circuitry. The TO-3P case style provides robust protection for the internal components, ensuring long-term reliability even in demanding environments. Whether you're building a new electronics project or replacing an old transistor, the 2SK1489(Q) delivers the voltage, current, and power ratings you need for success

Key Features

High breakdown voltage
Low on-resistance
Low input and output capacitance
High speed switching
Enhanced thermal performance

Application

RF amplifier applications
VHF/UHF band amplifiers
High-frequency applications
Signal processing applications
Switching applications
Motor control applications
Power amplifier applications
Audio amplifier applications

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1 kV
Id - Continuous Drain Current	12 A	Rds On - Drain-Source Resistance	1 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	200 W
Channel Mode	Enhancement	Series	2SK1489
Configuration	Single	Fall Time	150 ns
Height	26 mm	Length	20 mm
Product Type	MOSFET	Rise Time	100 ns
Factory Pack Quantity	25	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	5 mm
Unit Weight	0.245577 oz