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See Technical Specifications

BD676G

Medium Power PNP Darlington Bipolar Power Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

BD676G
Datasheet:

BD676G Datasheet (PDF)
Transistor Type:

PNP - Darlington
Current - Collector (Ic) (Max):

4 A
Voltage - Collector Emitter Breakdown (Max):

45 V
Vce Saturation (Max) @ Ib, Ic:

2.5V @ 30mA, 1.5A
EDA/CAD Models:

Request Free CAD Models for BD676G

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BD676G General Description

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 4 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 750 / Collector-Base Voltage (Vcbo) V = 45 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 40 / Package Type = TO-225 / Pins = 3 / Mounting Type = Through Hole / Packaging = Bulk Box / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.5 / Reflow Temperature Max. °C = 260

Key Features

High DC Current Gain -
h_FE = 750 (Min) @ I_C = 1.5 and 2.0 Adc
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682
are complementary with BD675, 675A, 677, 677A, 679, 679A, 681
BD 678, 678A, 680, 680A
are equivalent to MJE 700, 701, 702, 703
Pb-Free Packages are Available

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	PNP - Darlington	Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	45 V	Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)	500µA	DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V
Power - Max	40 W	Frequency - Transition	-
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	BD676