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See Technical Specifications

BD675G +BOM

BD Series 45 V 4 A Medium Power Silicon NPN Darlington Transistor - TO-225AA

Manufacturer:

onsemi
Mfr.Part #:

BD675G
Datasheet:

BD675G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Collector Current-Max (IC):

4 A
EDA/CAD Models:

Request Free CAD Models for BD675G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

BD675G General Description

DARLINGTON TRANSISTOR, TO-225AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 1MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor Ca

Key Features

High DC Current Gain h_FE = 750 (Min) @ I_C
= 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
Pb-Free Packages are Available

Application

AMPLIFIER

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code
Collector Current-Max (IC)	4 A	Collector-Emitter Voltage-Max	45 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DC Current Gain-Min (hFE)	750
JEDEC-95 Code	TO-225AA	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Moisture Sensitivity Level	NOT SPECIFIED
Number of Elements	1	Number of Terminals	3
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	NPN
Qualification Status	COMMERCIAL	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON