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See Technical Specifications

BC848ALT1G

Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

BC848ALT1G
Datasheet:

BC848ALT1G Datasheet (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

100 mA
Voltage - Collector Emitter Breakdown (Max):

30 V
Vce Saturation (Max) @ Ib, Ic:

600mV @ 5mA, 100mA
EDA/CAD Models:

Request Free CAD Models for BC848ALT1G

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BC848ALT1G General Description

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 600 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260

Key Features

Moisture Sensitivity Level: 1
ESD Rating - Human Body Model: >4000 V
ESD Rating - Machine Model: >400 V
Pb-Free Packages are Available
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Application

ESD Protection
Polarity Reversal Protection
Data Line Protection
Inductive Load Protection
Steering Logic

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN	Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	30 V	Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 2mA, 5V
Power - Max	300 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BC848