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See Technical Specifications

BC556BTA

Bipolar (BJT) Transistor PNP 65 V 100 mA 150MHz 500 mW Through Hole TO-92-3

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

BC556BTA
Datasheet:

BC556BTA Datasheet (PDF)
Transistor Type:

PNP
Current - Collector (Ic) (Max):

100 mA
Voltage - Collector Emitter Breakdown (Max):

65 V
Vce Saturation (Max) @ Ib, Ic:

650mV @ 5mA, 100mA
EDA/CAD Models:

Request Free CAD Models for BC556BTA

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BC556BTA General Description

The 100 mA, 65 V PNP Bipolar Junction Transistor is designed for use in amplifier and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Key Features

High Voltage: BC556 V_CEO= -65V
Low Noise: BC559,BC560
Complement to BC546.BC550Switching and Amplifier

Application

This product is general usage and suitable for many different applications.

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	PNP	Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	65 V	Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Power - Max	500 mW	Frequency - Transition	150MHz
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Base Product Number	BC556