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See Technical Specifications

BC517G +BOM

Bipolar (BJT) Transistor NPN - Darlington 30 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)

Manufacturer:

onsemi
Mfr.Part #:

BC517G
Datasheet:

BC517G Datasheet (PDF)
Transistor Type:

NPN - Darlington
Current - Collector (Ic) (Max):

1 A
Voltage - Collector Emitter Breakdown (Max):

30 V
Vce Saturation (Max) @ Ib, Ic:

1V @ 100µA, 100mA
EDA/CAD Models:

Request Free CAD Models for BC517G

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Tel: +852 95804164

BC517G General Description

BIPOLAR Transistor, NPN, 30V, TO-92; BIPOLAR Transistor, NPN, 30V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:200MHz; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:30000; No. of Pins:3

Key Features

Pb-Free Packages are Available

Application

ESD Protection
Polarity Reversal Protection
Data Line Protection
Inductive Load Protection
Steering Logic

Specifications

Transistor Type	NPN - Darlington	Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	30 V	Vce Saturation (Max) @ Ib, Ic	1V @ 100µA, 100mA
Current - Collector Cutoff (Max)	500nA	DC Current Gain (hFE) (Min) @ Ic, Vce	30000 @ 20mA, 2V
Power - Max	625 mW	Frequency - Transition	200MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole