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APTGT200H60G

IGBT Module Trench Field Stop Full Bridge Inverter 600 V 290 A 625 W Chassis Mount SP6

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APTGT200H60G General Description

IGBT Module Trench Field Stop Full Bridge Inverter 600 V 290 A 625 W Chassis Mount SP6

Microchip Technology, Inc Inventory

Key Features

  • Configuration: Full bridge
  • VCES (V): 600
  • VCESat (V): 1.5
  • Current (A)>
  • Silicon type: TRENCH 3 IGBT
  • Package: SP6C
  • Configuration: Full bridge
  • VCES (V): 600
  • VCESat (V): 1.5
  • Current (A)>
  • Silicon type: TRENCH 3 IGBT
  • Package: SP6C
Microchip Technology, Inc Original Stock

Specifications

Product Category: IGBT Modules Product: IGBT Silicon Modules
Configuration: Full Bridge Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.5 V Continuous Collector Current at 25 C: 290 A
Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 625 W
Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 100 C
Packaging: Tube Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V Product Type: IGBT Modules
Factory Pack Quantity: 1 Subcategory: IGBTs
Unit Weight: 3.880136 oz Tags APTGT200, APTGT20, APTGT2, APTGT, APTG, APT
Product Category IGBT Modules Product IGBT Silicon Modules
Configuration Full Bridge Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.5 V Continuous Collector Current at 25 C 290 A
Gate-Emitter Leakage Current 400 nA Pd - Power Dissipation 625 W
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 100 C
Maximum Gate Emitter Voltage 20 V Mounting Style Chassis Mount
Product Type IGBT Modules Factory Pack Quantity 1
Subcategory IGBTs Technology Si
Unit Weight 3.880136 oz

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Availability: 4506 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $725.796 $725.80
200+ $289.599 $57,919.80
500+ $279.921 $139,960.50
1000+ $275.140 $275,140.00

The prices below are for reference only.

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