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2N5684

Bipolar Transistors - BJT 80V 50A PNP Power BJT THT

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2N5684 General Description

The Power 50A 80 V Bipolar NPN Transistor is designed for use in high power amplifier and switching circuit applications.

Key Features

  • High Current Capability - IC Continuous = 50 Amperes.
  • DC Current Gain - hFE = 15-60 @ IC = 25 Adc
  • Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
  • Pb-Free Packages are Available

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 5 V
Maximum DC Collector Current 50 A Pd - Power Dissipation 300 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si
Unit Weight 1.447937 oz

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Availability: 7375 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $1.652 $1.65
10+ $1.424 $14.24
30+ $1.282 $38.46
100+ $1.136 $113.60
500+ $1.069 $534.50
1000+ $1.041 $1,041.00

The prices below are for reference only.

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