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2N5190 +BOM

4.0 A, 40 V NPN Bipolar Power Transistor, TO-225

Manufacturer:

Onsemi
Mfr.Part #:

2N5190
Datasheet:

2N5190 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

40 V
EDA/CAD Models:

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2N5190 General Description

The 2N5190 is a PNP Bipolar Junction Transistor (BJT) that is designed for general purpose amplifier and switching applications. It has a maximum collector current rating of 1A and a maximum collector-base voltage of 60V. The transistor is housed in a TO-39 package and features low saturation voltage and high current gain.The 2N5190 is commonly used in audio amplifiers, voltage regulators, and switching circuits due to its high current handling capabilities and low noise characteristics. It is also suitable for high frequency applications up to a few megahertz.The transistor has a power dissipation rating of 1.2W and a transition frequency of 40MHz, making it suitable for medium power applications. It has a typical hFE (DC current gain) of 200 at a collector current of 500mA.The 2N5190 is a versatile transistor that can be used in a wide range of electronic circuits, including audio amplifiers, power supplies, and motor control circuits. It is a reliable and cost-effective option for designers looking for a general purpose PNP transistor with moderate power handling capabilities

Key Features

NPN silicon transistor
Low noise figure
High gain
Low frequency switching
Power dissipation: 500 mW
Collector current: 200 mA

Application

High-frequency amplification
Radio frequency (RF) applications
Telecommunication systems
RF power amplifiers
Microwave circuits
Signal amplification
Transmitter and receiver circuits
Satellite communication systems
Radar systems
Mobile communication devices

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	40 V	Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	5 V	Maximum DC Collector Current	4 A
Pd - Power Dissipation	40 W	Gain Bandwidth Product fT	2 MHz
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
DC Collector/Base Gain hfe Min	25	Height	11.04 mm
Length	7.74 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	500	Subcategory	Transistors
Technology	Si	Width	2.66 mm