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2N4858A
JFET transistor, N-channel type, enclosed in a TO-18 package made of silicon, capable of withstanding voltages up to 40 volts
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Manufacturer:
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Mfr.Part #:
2N4858A
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Configuration:
Single
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EDA/CAD Models:
Availability: 7139 PCS
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2N4858A General Description
The 2N4858A is a silicon N-channel JFET (Junction Field-Effect Transistor) designed for high-speed switching applications. It is commonly used in various electronic circuits where low noise and high gain are required. Some of the key specifications of the 2N4858A include a maximum drain-source voltage of 40V, a maximum gate-source voltage of -30V, and a maximum drain current of 5mA. The device features a low input capacitance of 4 pF, making it suitable for high-frequency applications.The 2N4858A has a low ON-state resistance of 20 ohms, allowing for efficient current flow and minimal power dissipation. It also has a high transition frequency of 300 MHz, making it suitable for use in high-speed switching circuits.The JFET is housed in a TO-18 package, which provides mechanical protection and easy mounting. It is also RoHS compliant, ensuring that it meets environmental standards for electronics manufacturing.
Key Features
- High voltage N-channel JFET
- Low noise and input capacitance
- Enhanced temperature and thermal stability
- Suitable for high-frequency applications
- Designed for audio amplifiers, oscillators, and analog switches
- Available in TO-92 package
Application
- RF amplification in high frequency applications
- Microwave communication systems
- Satellite communication systems
- Radar systems
- Wireless networking devices
- Broadcasting equipment
- Medical imaging equipment
- Industrial automation systems
- Test and measurement instruments
- Military and defense systems
Specifications
Product Category | JFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Configuration | Single | Vgs - Gate-Source Breakdown Voltage | - 40 V |
Gate-Source Cutoff Voltage | - 4 V | Rds On - Drain-Source Resistance | 60 Ohms |
Pd - Power Dissipation | 1.8 W | Product Type | JFETs |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Type | JFET |
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Availability: 7139 PCS
+BOMQty. | Unit Price | Ext. Price |
---|---|---|
1+ | $5.185 | $5.18 |
200+ | $2.069 | $413.80 |
500+ | $2.001 | $1,000.50 |
1000+ | $1.967 | $1,967.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for 2N4858A, guaranteed quotes back within 12hr.
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