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2N4854 +BOM

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 40V 600mA 600mW Through Hole TO-78-6

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2N4854 General Description

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 40V 600mA 600mW Through Hole TO-78-6

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
Collector Current-Max (IC) 0.6 A Collector-Emitter Voltage-Max 40 V
Configuration SEPARATE, 2 ELEMENTS DC Current Gain-Min (hFE) 35
JEDEC-95 Code TO-78 JESD-30 Code O-MBCY-T6
JESD-609 Code e0 Number of Elements 2
Number of Terminals 6 Operating Temperature-Max 200 °C
Polarity/Channel Type NPN AND PNP Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Position BOTTOM
Transistor Element Material SILICON Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 45 ns

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In Stock: 6,284

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $61.511 $61.51
200+ $23.805 $4,761.00
500+ $22.968 $11,484.00
1000+ $22.555 $22,555.00

The prices below are for reference only.

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