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2N4351 +BOM

Small Signal Field-Effect Transistor, 0.1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4

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2N4351 General Description

Small Signal Field-Effect Transistor, 0.1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-72, HERMETIC SEALED PACKAGE-4

Key Features

  • Low ON Resistance
  • Low Capacitance
  • High Gain
  • High Gate Breakdown Voltage
  • Low Threshold Voltage

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 4 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.95
Case Connection SUBSTRATE Configuration SINGLE
DS Breakdown Voltage-Min 25 V Drain Current-Max (ID) 0.1 A
Drain-source On Resistance-Max 300 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.3 pF JEDEC-95 Code TO-72
JESD-30 Code O-MBCY-W3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified Surface Mount NO
Terminal Form WIRE Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
L
L**s 10/17/2021

Although he was late, he arrived complete as the photo indicates

4
M
M**n 02/01/2021

Everything is fine. I recommend.

6
M
M**n 02/14/2020

Good product and fast

18

Reviews

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