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See Technical Specifications

J108

JFET N-Channel 25 V 625 mW Through Hole TO-92-3

Manufacturer:

InterFET Corp
Mfr.Part #:

J108
Datasheet:

J108 Datasheet (PDF)
FET Type:

N-Channel
Voltage - Breakdown (V(BR)GSS):

25 V
Current - Drain (Idss) @ Vds (Vgs=0):

80 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id:

3 V @ 10 nA
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J108 General Description

The J108 is an N-channel JFET. N-channel JFETs are the most common type of JFET and are characterized by their ability to conduct current when a negative voltage is applied to the gate terminal. They are typically used in electronic circuits for signal amplification and switching applications.

Key Features

Polarity: N-Channel (NPN).
Drain-Source Voltage (VDS): The maximum voltage that can be applied between the drain and source terminals without causing breakdown.
Gate-Source Voltage (VGS): The voltage applied between the gate and source terminals controls the JFET's current flow.
Gate Current (IG): The small current that flows into the gate terminal controls the JFET's operation.
Transconductance (gm): Transconductance is a measure of the JFET's ability to amplify signals.
Low Input Impedance: JFETs typically have a high input impedance, making them suitable for many high-impedance applications.

Application

Amplifiers
Signal Switching
Voltage-Controlled Resistors
Voltage Buffers
Oscillators
Sensor Interface
Low-Noise Applications

Specifications

Category	Discrete Semiconductor ProductsTransistorsJFETs	Series	-
FET Type	N-Channel	Voltage - Breakdown (V(BR)GSS)	25 V
Current - Drain (Idss) @ Vds (Vgs=0)	80 mA @ 15 V	Voltage - Cutoff (VGS off) @ Id	3 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds	-	Resistance - RDS(On)	8 Ohms
Power - Max	625 mW	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	J108
Product Category	JFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Configuration	Single	Vds - Drain-Source Breakdown Voltage	15 V
Vgs - Gate-Source Breakdown Voltage	- 25 V	Gate-Source Cutoff Voltage	- 10 V
Drain-Source Current at Vgs=0	80 mA	Id - Continuous Drain Current	1 uA
Rds On - Drain-Source Resistance	8 Ohms	Pd - Power Dissipation	360 mW
Product Type	JFETs	Factory Pack Quantity	1
Subcategory	Transistors	Type	JFET
Unit Weight	0.016000 oz

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Ratings and Reviews

L**n 01/31/2022

Everything is perfectly satisfied with everyone! In the work has not yet tried

M**a 09/25/2021

Just received the item. All parts received! Will update after fixing it up

E**a 05/05/2021

The parcel arrived after 53 days. All works fine, according to the description.

E**y 01/16/2021

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