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IXGH48N60C3D1

N-channel IGBT Chip capable of handling 300W

Manufacturer:

Littelfuse
Mfr.Part #:

IXGH48N60C3D1
Datasheet:

IXGH48N60C3D1 Datasheet (PDF)
VCES - Collector-Emitter Voltage (V):

600
Collector Current @ 25 ℃ (A):

75
VCE(sat) - Collector-Emitter Saturation Voltage (V):

2.5
Fall Time [Inductive Load] (ns):

38
EDA/CAD Models:

Request Free CAD Models for IXGH48N60C3D1

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IXGH48N60C3D1 General Description

GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process.300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a new high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs.600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and hard-switching frequencies of 40 kHz. These devices utilize our proven Punch-Through (PT) technology providing higher surge current capabilities, lower saturation voltage, and lower energy losses offering designers a new viable option for switching applications at the 600V range.1200V GenX3™ utilize our advanced Punch-Through (PT) technology to provide lower saturation voltages, lower switching losses, and higher surge current capabilities. This growing product line aimed at the high voltage power conversion market.To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications offer greater system design flexibility and the opportunity for designers to reach the best compromise between critical requirements such as switching frequency, efficiency, and cost.

Key Features

High current handling capability
International standard packages
Optimized for low conduction & switching losses
Ultra fast anti-parallel diode (optional)
Avalanche rated
Square RBSOA
Low cost alternative to MOSFETs in the 300V range
Drive simplicity with MOS Gate turn-on
High frequency IGBT

Application

Power inverters
UPS
Motor drives
SMPS
PFC circuits
Battery chargers
Welding machines
Lamp ballast
In-rush current protection circuits
DC choppers
Induction heating
Solar system inverters
Power Factor Correction Circuit
Uninterrupted power supply
Switch Mode power supply
Motor controls (ACAC/DC Motors)
Capacitive discharge switch

Specifications

Status	Active	VCES - Collector-Emitter Voltage (V)	600
Collector Current @ 25 ℃ (A)	75	VCE(sat) - Collector-Emitter Saturation Voltage (V)	2.5
Fall Time [Inductive Load] (ns)	38	Configuration	Copack (FRED)
Thermal resistance [junction-case] [IGBT] (K/W)	0.42	Turn-off Energy @ 125 ℃ (mJ)	0.57
Collector Current @ 110 ℃ (A)	48	Thermal resistance [junction-case] [Diode] (K/W)	0.9
Forward Current @ 110 ℃ (A)	30