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IXLF19N250A
IGBT Transistors High Voltage IGBT 2500V; 19A
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Manufacturer:
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Mfr.Part #:
IXLF19N250A
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Datasheet:
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Mount:
Through Hole
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Number of Pins:
3
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Collector Emitter Breakdown Voltage:
2.5 kV
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Collector Emitter Saturation Voltage:
3.2 V
Availability: 7769 PCS
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IXLF19N250A General Description
IGBT NPT 2500 V 32 A 250 W Through Hole ISOPLUS i4-PAC™
Key Features
- High power density
- High frequency operation
- Low conduction losses
- MOS gate turn on for drive simplicity
- 4000V electrical isolation
- Advantages:
- Low gate drive requirements
- Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices)
- Easy to mount
Application
- Switched-mode and resonant-mode power supplies
- Uninterruptible Power Supplies (UPS)
- Laser and X-ray generators
- Capacitor discharge circuits
- High voltage pulser circuits
- High voltage test equipment
- AC switches
Specifications
Mount | Through Hole | Number of Pins | 3 |
Collector Emitter Breakdown Voltage | 2.5 kV | Collector Emitter Saturation Voltage | 3.2 V |
Collector Emitter Voltage (VCEO) | 2.5 kV | Current Rating | 32 A |
Element Configuration | Single | Max Collector Current | 32 A |
Max Operating Temperature | 150 °C | Max Power Dissipation | 250 W |
Min Operating Temperature | -55 °C | Packaging | Bulk |
Power Dissipation | 250 W | Rise Time | 50 ns |
Turn-Off Delay Time | 600 ns | Turn-On Delay Time | 100 ns |
Voltage Rating (DC) | 2.5 kV |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Availability: 7769 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IXLF19N250A, guaranteed quotes back within 12hr.
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