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See Technical Specifications

2N7002V +BOM

Mosfet Array 60V 280mA 250mW Surface Mount SOT-563F

Manufacturer:

onsemi
Mfr.Part #:

2N7002V
Datasheet:

2N7002V Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for 2N7002V

Description

The ON SEMICONDUCTOR 2N7002V is a dual N-channel power MOSFET, packaged in SOT-563. It offers fast switching, low power consumption, and high efficiency, making it suitable for various applications. The device features ultra-low distortion, high signal-to-noise ratio, and frequency hopping capability, making it ideal for tasks that require precision and reliability. The 2N7002V is a versatile product that can be used in a range of projects, from simple to complex, due to its adaptability to various requirements. It has pulse modulation capability, high-speed data transfer, low jitter error rate, sub-microsecond response, and a millisecond-level accuracy. With fast clock frequency and high-frequency hopping capability, it is an innovative solution for applications that demand quick responses. Overall, the introduction to the 2N7002V highlights its impressive performance characteristics and broad applicability.

Features

The ON SEMICONDUCTOR - 2N7002V MOSFET features:

Fast switching
Low power consumption
High efficiency
Small signal operation
Rapid frequency response
Low noise figure
High isolation
Ultra-low distortion
High signal-to-noise ratio
Frequency hopping capability
Micro-power consumption
Low current draw
Ultra-high-speed transfer
Pulse modulation capability
High-speed data transfer
Low jitter error rate
Sub-microsecond response
Millisecond-level accuracy
Fast clock frequency

These features make the 2N7002V suitable for a wide range of applications, including those that require high speed, low power consumption, and high efficiency.

Package

According to the product information, the package type of 2N7002V is SOT-563.

Pinout

The ON Semiconductor 2N7002V is a dual N-channel power MOSFET packaged in a SOT-563 package.

Pin Count: 1. Drain (D) 2. Gate (G) 3. Source (S)

Function:

Pin 1 (D): Drain terminal
Pin 2 (G): Gate terminal for control and switching
Pin 3 (S): Source terminal for input and output

This device is designed for high-frequency, low-loss applications such as power supplies, motor drives, and audio amplifiers.

Manufacturer

The manufacturer of the 2N7002V is ON Semiconductor, a leading global semiconductor company that specializes in designing, manufacturing, and marketing a wide range of semiconductor products.

Equivalent

The equivalent products of ON SEMICONDUCTOR - 2N7002V are:

STP16NF06L
IRF610
NXP BUK206-50A
Vishay SiH1408A-E3/5

Please note that the equivalent products may vary depending on the specific application and requirements.

Specifications

Source Content uid	2N7002V	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	24 Weeks, 4 Days
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	0.28 A	Drain-source On Resistance-Max	7.5 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	7 pF
JESD-30 Code	R-PDSO-F6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.25 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Tin (Sn)	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	280 mA	Rds On - Drain-Source Resistance	7.5 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	150 mW
Channel Mode	Enhancement	Series	2N7002V
Height	0.78 mm	Length	1.6 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Typical Turn-Off Delay Time	12.5 ns
Typical Turn-On Delay Time	5.85 ns	Width	0.88 mm
Unit Weight	0.000071 oz	Package/Case	SOT-563