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G2R1000MT17J +BOM

-Element, N-Channel, Silicon Carbide

email Email: [email protected]
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tel Tel: +852 95804164

G2R1000MT17J General Description

N-Channel 1700 V 3A (Tc) 54W (Tc) Surface Mount TO-263-7

Specifications

Series G2R™ FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V Vgs(th) (Max) @ Id 4V @ 2mA
Vgs (Max) +20V, -10V Input Capacitance (Ciss) (Max) @ Vds 139 pF @ 1000 V
Power Dissipation (Max) 54W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Base Product Number G2R1000

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