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G2R1000MT33J +BOM

This TO-263-7 surface mount component can handle up to 4A of current and dissipate 74W of power

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G2R1000MT33J General Description

N-Channel 3300 V 4A (Tc) 74W (Tc) Surface Mount TO-263-7

Specifications

Series G2R™ FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 3300 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V Vgs(th) (Max) @ Id 3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 238 pF @ 1000 V Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number G2R1000

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