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G3R20MT12N +BOM

MOSFET, SIC, N-CH, 1.2KV, 105A, 365W;

Manufacturer:

GeneSiC Semiconductor
Mfr.Part #:

G3R20MT12N
Datasheet:

G3R20MT12N Datasheet (PDF)
Series:

G3R™
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

1200 V
EDA/CAD Models:

Request Free CAD Models for G3R20MT12N

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G3R20MT12N General Description

Elevate your power electronics projects with the advanced features of the Genesic Semiconductor G3R20MT12N Sic Mosfet. This high-performance N-Channel Mosfet excels in handling continuous drain currents of 105A and drain source voltages of 1.2Kv, making it a reliable choice for demanding applications. The Mosfet module is designed for single channel use with 4 pins for convenient installation. Moreover, with a power dissipation of 365W and RoHS compliance, you can trust in the quality and environmental sustainability of this cutting-edge semiconductor device

Specifications

Series	G3R™	FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)	Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	105A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	24mOhm @ 60A, 15V	Vgs(th) (Max) @ Id	2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs	219 nC @ 15 V	Vgs (Max)	+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds	5873 pF @ 800 V	Power Dissipation (Max)	365W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Chassis Mount
Base Product Number	G3R20