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FDMB3800N +BOM
0V rated voltage
PowerWDFN-8-
Manufacturer:
-
Mfr.Part #:
FDMB3800N
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Datasheet:
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Case Outline:
511CW
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MSL Temp (°C):
260
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Container Type:
REEL
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Technology:
Si
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EDA/CAD Models:
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FDMB3800N Information
Description
The onsemi FDMB3800N is a high-performance N-channel power MOSFET designed for various applications. It features a trench technology that provides extremely low RDS(on) and high current handling capability, making it suitable for efficient and dependable product designs. With a maximum RDS(on) of 40mΩ at VGS = 10V and ID = 4.8A, this MOSFET is ideal for applications requiring high power and current handling. Its fast switching speed, low gate charge, and RoHS compliance make it a reliable choice for multiple applications. The FDMB3800N is suitable for various needs, including motor control, power supplies, and automotive applications. Its high performance, durability, and adaptability make it a trusted option for designers seeking efficient and dependable solutions.
Features
The FDMB3800N features:
- Max rDS(on) = 40mΩ at VGS = 10V, ID = 4.8A
- Max rDS(on) = 51mΩ at VGS = 4.5V, ID = 4.3A
- Fast switching speed
- Low gate Charge
- High performance trench technology for extremely low RDS(on)
- High power and current handling capability
- RoHS Compliant
Package
The package type of FDMB3800N is 8-PowerWDFN.
Pinout
According to the product information, the FDMB3800N has a package type of "8-PowerWDFN". This suggests that it has 8 pins. The description does not explicitly mention the function of each pin, but as a Trans MOSFET, we can infer that the 8-pin configuration is likely for gate-source (GS), drain-source (DS), and possibly other control or sensing signals. Typical pins for a MOSFET include VCC, GND, Gate, Source, Drain, and sometimes additional connections like a Body or Compensation pin. In summary, the FDMB3800N has an 8-pin package with functions that enable its operation as an N-Channel Trans MOSFET for power switching applications.
Manufacturer
The manufacturer of the FDMB3800N is ON Semiconductor (onsemi).
Equivalent
Based on the specifications, some equivalent products to FDMB3800N are:
- STP16NF50
- IRF540N
- N-channel MOSFETs with similar characteristics (30V, 4.8A, etc.)
Please note that this is not an exhaustive list and other manufacturers may have similar products as well.
Specifications
Status | Active | Case Outline | 511CW |
MSL Temp (°C) | 260 | Container Type | REEL |
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 4.8 A | Rds On - Drain-Source Resistance | 32 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 5.6 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.6 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Series | FDMB3800N | Configuration | Dual |
Fall Time | 5 ns | Forward Transconductance - Min | 14 S |
Height | 0.8 mm | Length | 3 mm |
Product | MOSFET Small Signal | Product Type | MOSFET |
Rise Time | 5 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 21 ns |
Typical Turn-On Delay Time | 8 ns | Width | 1.9 mm |
Unit Weight | 0.002363 oz | Package/Case | PowerWDFN-8 |
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FDMB3800N Datasheet PDF
FDMB3800N PDF Preview
In Stock: 5,141
Minimum Order: 1
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Great product, recommended.