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CM600HA-24A

IGBT MOD 1200V 600A 3670W

Manufacturer:

Mitsubishi Electronics
Mfr.Part #:

CM600HA-24A
Datasheet:

CM600HA-24A Datasheet (PDF)
Product:

IGBT Silicon Modules
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
Collector-Emitter Saturation Voltage:

2.1 V
EDA/CAD Models:

Request Free CAD Models for CM600HA-24A

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Tel: +852 95804164

CM600HA-24A General Description

The CM600HA-24A is a high-power module designed for use in various power electronic applications, such as motor drives, power supplies, and inverters. It combines multiple power components, such as IGBTs (Insulated Gate Bipolar Transistors) and diodes, into a single package, offering convenience and efficiency in high-power applications.

Key Features

High Voltage and Current Rating: The CM600HA-24A is designed to handle high voltage and current levels, making it suitable for demanding applications.
Low On-State Voltage Drop: The module features low on-state voltage drop, which helps minimize power losses and improves overall efficiency.
Low Switching Loss: It is optimized for low switching losses, allowing for efficient power conversion and reduced heat generation.
High Thermal Conductivity: The power module has high thermal conductivity to dissipate heat effectively and ensure reliable operation even in high-power applications.
Built-in Protection Features: The CM600HA-24A includes built-in protection features such as short circuit protection and temperature monitoring, enhancing the safety and reliability of the system.

Specifications

Product Category:	IGBT Modules	Product:	IGBT Silicon Modules
Configuration:	Single	Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V	Continuous Collector Current at 25 C:	600 A
Gate-Emitter Leakage Current:	1 uA	Pd - Power Dissipation:	3670 W
Minimum Operating Temperature:	- 40 C	Maximum Operating Temperature:	+ 150 C
Maximum Gate Emitter Voltage:	20 V	Mounting Style:	Screw
Product Type:	IGBT Modules	Factory Pack Quantity:	10
Subcategory:	IGBTs	Technology:	Si