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CM300DY-12NF
Advanced technology module designed for superior performance in high current systems
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Manufacturer:
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Mfr.Part #:
CM300DY-12NF
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Datasheet:
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Product:
IGBT Silicon Modules
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Configuration:
Dual
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Collector- Emitter Voltage VCEO Max:
600 V
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Collector-Emitter Saturation Voltage:
1.7 V
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EDA/CAD Models:
Availability: 7166 PCS
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CM300DY-12NF General Description
The CM300DY-12NF is a dual IGBT module designed for use in high power applications. It features a voltage rating of 1200V and a current rating of 300A, making it suitable for a wide range of industrial and commercial applications. The module is designed with a compact and lightweight package, making it easy to integrate into various systems.The CM300DY-12NF features a robust construction that ensures reliable performance and long service life. It is capable of handling high levels of power and can operate in harsh environments without compromising its performance. The module also features built-in protection features, such as overcurrent and overvoltage protection, to ensure the safety of the system and the module itself.The CM300DY-12NF is designed for use in applications such as motor drives, power supplies, and inverters. Its high power rating and rugged design make it ideal for use in demanding environments where reliability is crucial.
Key Features
- CM300DY-12NF is a dual IGBT module
- Designed for high power switching applications
- Module features include high speed, low loss, and soft recovery diodes
- Provides high reliability and efficiency
- Rated voltage of 1200V and current of 300A
- Perfect for industrial and power electronics applications
Application
- Industrial motor drives
- Renewable energy systems
- Uninterruptible power supplies
- Induction heating equipment
- Welding machines
- Automotive power systems
Specifications
Product Category | IGBT Modules | Product | IGBT Silicon Modules |
Configuration | Dual | Collector- Emitter Voltage VCEO Max | 600 V |
Collector-Emitter Saturation Voltage | 1.7 V | Continuous Collector Current at 25 C | 300 A |
Gate-Emitter Leakage Current | 500 nA | Pd - Power Dissipation | 780 W |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Maximum Gate Emitter Voltage | 20 V | Mounting Style | Screw Mount |
Product Type | IGBT Modules | Factory Pack Quantity | 10 |
Subcategory | IGBTs | Technology | Si |
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Availability: 7166 PCS
+BOMQty. | Unit Price | Ext. Price |
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