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RD07MUS2B

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

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RD07MUS2B General Description

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

Specifications

Pbfree Code Yes Part Life Cycle Code Active
Pin Count 10 ECCN Code EAR99
Case Connection SOURCE Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V Drain Current-Max (Abs) (ID) 3 A
Drain Current-Max (ID) 3 A FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND JESD-30 Code R-XQCC-N3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form NO LEAD
Terminal Position QUAD Transistor Application AMPLIFIER
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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