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BSC072N08NS5ATMA1

Trans MOSFET N-CH 80V 74A 8-Pin TDSON EP T/R

Manufacturer:

INFINEON
Mfr.Part #:

BSC072N08NS5ATMA1
Datasheet:

BSC072N08NS5ATMA1 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for BSC072N08NS5ATMA1

Email: [email protected]

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BSC072N08NS5ATMA1 General Description

OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	40 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80 V	Drain Current-Max (ID)	19 A
Drain-source On Resistance-Max	0.0072 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	296 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON