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In Stock: 5,722
High-power N-channel MOSFET for demanding applications
IRF640N
The IRF640N is a N-channel MOSFET from Infineon, designed for high-current applications. It features a planar cell structure for wide safe operating area (SOA) and optimized for broad availability from distribution partners. The device has a TO-220 package and operates at 18A with a voltage rating of 200V. The IRF640N is suitable for low-frequency switching applications, offering high-performance and increased ruggedness. Its industry-standard through-hole power package allows for easy integration into existing designs. With its high current capability and standard pin-out, it can be used as a drop-in replacement in many applications. Overall, the IRF640N is a reliable and efficient MOSFET solution for various industrial and commercial applications, including motor control, lighting, and power supplies.
The IRF640N features include:
The package type of IRF640N is TO-220.
The manufacturer of the IRF640N is Infineon, which is a semiconductor company that designs, develops, manufactures, and tests semiconductors and microelectronics products.
Tj max | 175.0 °C | Mounting | THT |
---|---|---|---|
Polarity | N | Ptot max | 150.0 W |
RthJC max | 1.0 K/W | VDS max | 200.0 V |
VGS max | 20.0 V | RDS (on) max | 150.0 mΩ |
VGS(th) max | 4.0 V | VGS(th) min | 2.0 V |
ID max | 18.0 A | Operating Temperature max | 175.0 °C |
Operating Temperature min | -55.0 °C | Package/Case | TO-220 |
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Quantity
Unit Price
Ext. Price
5+
$0.286
$1.43
50+
$0.233
$11.65
150+
$0.210
$31.50
500+
$0.182
$91.00
2000+
$0.169
$338.00
5000+
$0.162
$810.00
*The prices above are for reference only.
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