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2SK3666-3-TB-E
JFET N-Channel 10 mA 200 mW Surface Mount SMCP
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Manufacturer:
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Mfr.Part #:
2SK3666-3-TB-E
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Datasheet:
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FET Type:
N-Channel
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Drain to Source Voltage (Vdss):
30 V
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Current - Drain (Idss) @ Vds (Vgs=0):
1.2 mA @ 10 V
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Current Drain (Id) - Max:
10 mA
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EDA/CAD Models:
Availability: 4380 PCS
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2SK3666-3-TB-E General Description
JFET N-Channel 10 mA 200 mW Surface Mount SMCP
Key Features
- Low IGSS 1.0nA MAX
- High sensitive sensor module by low-leakage JFET
- Low IDSS 0.6-3.0mA
- Reduce power consumption by low drain current JFET
Application
- low-frequency,General-purpose Amplifier and Impedance converter
Specifications
Category | Discrete Semiconductor ProductsTransistorsJFETs | Series | - |
FET Type | N-Channel | Drain to Source Voltage (Vdss) | 30 V |
Current - Drain (Idss) @ Vds (Vgs=0) | 1.2 mA @ 10 V | Current Drain (Id) - Max | 10 mA |
Voltage - Cutoff (VGS off) @ Id | 180 mV @ 1 µA | Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
Resistance - RDS(On) | 200 Ohms | Power - Max | 200 mW |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | 2SK3666 |
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Availability: 4380 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
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The product corresponds to the description. After installation there will be additional feedback. Delivery is fast. Seller recommend!