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ZXMS6004FFQTA

Power MOSFET designed for use in electronic circuits requiring a 60V N-Channel device with 500mohm on-state resistance, 1

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZXMS6004FFQTA
Datasheet:

ZXMS6004FFQTA Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for ZXMS6004FFQTA

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ZXMS6004FFQTA General Description

The ZXMS6004FFQTA is a low-side P-channel MOSFET integrated circuit designed for automotive applications, particularly in power distribution and switching circuits. It is produced by Diodes Incorporated and is part of their ZXM series of power management products. The ZXMS6004FFQTA has a maximum drain-source voltage of -60V and a continuous drain current of -5.3A, making it suitable for a wide range of automotive applications. It also features low on-resistance of 0.089 ohms, ensuring efficient power distribution and minimal power loss.This MOSFET IC is housed in a compact and thermally efficient DFN2020-6 package, allowing for easy integration into small spaces and ensuring reliable performance in high-temperature environments. Additionally, it is capable of operating over a wide temperature range of -55°C to 150°C, further enhancing its versatility in automotive applications.

Key Features

Low on-resistance: 0.55 ohm (typical) at Vgs = 10V
Low threshold voltage: 1.0V (maximum) at Vgs = 1mA
Fast switching speed: 8ns (typical) rise and fall times
Low gate charge: 1.2nC (typical) at Vgs = 10V
Compact PQFN33 package

Application

LED lighting systems
Automotive lighting systems
Solar-powered lighting systems
Industrial control systems
Portable electronic devices
Battery-powered devices
Consumer electronics
Power management systems
Medical devices
Telecommunications equipment

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	1.3 A	Rds On - Drain-Source Resistance	500 mOhms
Vgs th - Gate-Source Threshold Voltage	700 mV	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C	Pd - Power Dissipation	1.5 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	IntelliFET	Series	ZXMS6004
Configuration	Single	Fall Time	15 us
Product Type	MOSFET	Rise Time	10 us
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	45 us
Typical Turn-On Delay Time	5 us	Unit Weight	0.000388 oz