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X28HC256PIZ-12 +BOM

EEPROM Memory IC 256Kbit Parallel 120 ns 28-PDIP

Manufacturer:

Renesas Electronics Corporation
Mfr.Part #:

X28HC256PIZ-12
Datasheet:

X28HC256PIZ-12 Datasheet (PDF)
Memory Type:

Non-Volatile
Memory Format:

EEPROM
Technology:

EEPROM
Memory Size:

256Kbit
EDA/CAD Models:

Request Free CAD Models for X28HC256PIZ-12

Email: [email protected]

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Tel: +852 95804164

X28HC256PIZ-12 General Description

Unleash the potential of your devices with the X28HC256PIZ-12, an advanced EEPROM chip that combines high performance with exceptional reliability. Crafted using Intersil's proprietary textured poly floating gate technology, this 32k x 8 memory module operates seamlessly at 5V, ensuring robust data storage capabilities. Its innovative 128-byte page write feature allows for quick write cycles, with the entire memory being typically rewritten in under 0.8s. Furthermore, the X28HC256 comes equipped with DATA polling and Toggle bit polling mechanisms for early detection of write completion, enabling smooth and efficient data management. Trust in the X28HC256 to deliver superior performance and reliability for all your memory storage needs

Key Features

Access time: 90ns
Simple byte and page write
Single 5V supply
No external high voltages or V_P-P control circuits
Self timed
No erase before write
No complex programming algorithms
No overerase problem
Low power CMOS
Active: 60mA
Standby: 500μA
Software data protection
Protects data against system level inadvertent writes
High-Speed page write capability
Highly reliable Direct Write™ cell
Endurance: 100,000 cycles
Data retention: 100 years
Early end of write detection
DATA polling
Toggle bit polling
RoHS compliant

Specifications

Memory Type	Non-Volatile	Memory Format	EEPROM
Technology	EEPROM	Memory Size	256Kbit
Memory Organization	32K x 8	Memory Interface	Parallel
Write Cycle Time - Word, Page	5ms	Access Time	120 ns
Voltage - Supply	4.5V ~ 5.5V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Through Hole