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TSM850N06CX RFG

High-performance N-MOSFET transistor tailored for unipolar operation

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TSM850N06CX RFG General Description

N-Channel 60 V 3A (Tc) 1.7W (Tc) Surface Mount SOT-23

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 3 A Rds On - Drain-Source Resistance 68 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 9.5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.7 W
Channel Mode Enhancement Configuration Single
Fall Time 17 ns Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 9.8 ns Typical Turn-On Delay Time 4.8 ns
Part # Aliases TSM850N06CX Unit Weight 0.000282 oz

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Availability: 7072 PCS

+BOM
Qty. Unit Price Ext. Price
5+ $0.170 $0.85
50+ $0.136 $6.80
150+ $0.121 $18.15
500+ $0.102 $51.00
3000+ $0.094 $282.00
6000+ $0.089 $534.00

The prices below are for reference only.

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