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TK3R1A04PL

MOSFETs Silicon N-channel MOS (U-MOS �-H)

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Toshiba Semiconductor Inventory

Key Features

  • Characteristics
  • Symbol
  • Condition
  • Value
  • Unit
  • Gate threshold voltage (Max)
  • V
  • th
  • 2.4
  • V
  • Drain-Source on-resistance (Max)
  • R
  • DS(ON)
  • GS
  • 3.8
  • mΩ
  • Drain-Source on-resistance (Max)
  • R
  • DS(ON)
  • GS
  • 3.1
  • mΩ
  • Input capacitance (Typ.)
  • C
  • iss
  • 4670
  • pF
  • Total gate charge (Typ.)
  • Q
  • g
  • V
  • GS
  • 63.4
  • nC
Toshiba Semiconductor Original Stock

Specifications

Pin Count 3 Released Date Feb 19, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
E
E**a 06/12/2023

Works. But you can use not only as charging, but also a heater in winter.

14
D
D**n 04/01/2022

13000 uf instead of 220 00 uf half below the norm ??? Marriage (forgery)

1
C
C**e 09/10/2020

Came for 5 days in orenburg, did not check the work

6

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TK3R1A04PL Datasheet PDF

Preliminary Specification TK3R1A04PL PDF Download

TK3R1A04PL PDF Preview

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