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TGF2023-2-02
RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
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Manufacturer:
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Mfr.Part #:
TGF2023-2-02
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Datasheet:
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Transistor Type:
HEMT
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Technology:
GaN SiC
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Transistor Polarity:
N-Channel
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Product:
RF JFET Transistors
Availability: 7784 PCS
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TGF2023-2-02 General Description
Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.
Key Features
- Frequency range: DC to 18 GHz
- 40.1 dBm nominal Psat at 3 GHz
- 73.3% maximum PAE
- 21 dB nominal power gain
- Bias: VD = 12 to 32 V, IDQ= 50 - 250 mA
- Chip dimensions: 0.82 x 0.92 x 0.10 mm
Application
- Broadband Wireless
- Military
- Space
Specifications
Product Category | RF JFET Transistors | Transistor Type | HEMT |
Technology | GaN SiC | Transistor Polarity | N-Channel |
Product | RF JFET Transistors | Product Type | RF JFET Transistors |
Series | TGF2023 | Factory Pack Quantity | 100 |
Subcategory | Transistors | Type | GaN SiC HEMT |
Part # Aliases | TGF2023 1099622 | Unit Weight | 0.008122 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Availability: 7784 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for TGF2023-2-02, guaranteed quotes back within 12hr.
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Delivery was fast. Product worked on first try.