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SUM85N15-19-E3

Single N-Channel 150 V 0.019 Ohms Surface Mount Power Mosfet - TO-263-3

Manufacturer:

Vishay Siliconix
Mfr.Part #:

SUM85N15-19-E3
Datasheet:

SUM85N15-19-E3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

150 V
EDA/CAD Models:

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SUM85N15-19-E3 General Description

MOSFET, N, REEL 800; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:85A; Resistance, Rds On:0.019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:180A; Max Repetitive Avalanche Energy:125mJ; Power Dissipation:375W; Power Dissipation on 1 Sq. PCB:3.75W; Power, Pd:375W; Quantity, Reel:800; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Time, trr Typ:130ns; Typ Capacitance Ciss:4750pF; Voltage, Vds Max:150V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V; Width, Tape:24mm

Key Features

None

Specifications

Series	TrenchFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	85A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	19mOhm @ 30A, 10V	Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4750 pF @ 25 V	Power Dissipation (Max)	3.75W (Ta), 375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SUM85