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SUM60N10-17-E3 +BOM

Power Field-Effect Transistor, 60A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

SUM60N10-17-E3 General Description

Power up your electronic projects with the SUM60N10-17-E3 MOSFET, a high-performance N-channel transistor that delivers exceptional power handling capabilities. With a continuous drain current rating of 60A and a drain-source voltage of 100V, this MOSFET is suitable for a wide range of applications. The on-resistance is rated at 16.5mohm with a test voltage of 10V, providing efficient power conversion and minimal heat dissipation. The threshold voltage is typically 4V, making it compatible with various voltage levels. The transistor case style is D2-PAK, featuring 3 pins for easy installation and secure connections. With a maximum power dissipation of 150W, this MOSFET can handle high-power applications with ease. The termination type is SMD, ensuring a reliable connection in compact spaces. Whether you're building industrial machinery or consumer electronics, the SUM60N10-17-E3 MOSFET is a reliable choice for your power management needs

Key Features

  • TrenchFET® Power MOSFETS
  • 175 °C Junction Temperature
  • Low Thermal Resistance Package
  • PWM Optimized for Fast Switching
  • 100 % Rg and UIS Tested
  • Compliant to RoHS Directive 2002/95/EC

Application

  • Isolated DC/DC converters - Primary-Side Switch

Specifications

Series TrenchFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 25 V Power Dissipation (Max) 3.75W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number SUM60

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