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See Technical Specifications

STW56N60M2

N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package

Manufacturer:

ST
Mfr.Part #:

STW56N60M2
Datasheet:

STW56N60M2 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Models:

Request Free CAD Models for STW56N60M2

Email: [email protected]

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Tel: +852 95804164

STW56N60M2 General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

Extremely low gate charge
Excellent output capacitance (C_oss) profile
100% avalanche tested
Zener-protected

Specifications

Source Content uid	STW56N60M2	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Configuration	SINGLE
Drain Current-Max (ID)	52 A	FET Technology	METAL-OXIDE SEMICONDUCTOR
Number of Elements	1	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	350 W	Surface Mount	NO
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED