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STW28NM50N +BOM

N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-247 package

Manufacturer:

ST
Mfr.Part #:

STW28NM50N
Datasheet:

STW28NM50N Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for STW28NM50N

Email: [email protected]

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Tel: +852 95804164

STW28NM50N General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Key Features

100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance

Application

SWITCHING

Specifications

Source Content uid	STW28NM50N	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	52 Weeks
Avalanche Energy Rating (Eas)	430 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	Drain Current-Max (ID)	21 A
Drain-source On Resistance-Max	0.158 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	150 W	Pulsed Drain Current-Max (IDM)	84 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON