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STW21NM60N

N-Channel 600 V 17A (Tc) 140W (Tc) Through Hole TO-247-3

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STW21NM60N General Description

N-Channel 600 V 17A (Tc) 140W (Tc) Through Hole TO-247-3

Key Features

  • The worldwide best RDS(on)area amongst the fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 17 A Rds On - Drain-Source Resistance 190 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 140 W
Channel Mode Enhancement Series STW21NM60N
Configuration Single Fall Time 31 ns
Forward Transconductance - Min 12 S Height 20.15 mm
Length 15.75 mm Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Type Power MOSFET Typical Turn-Off Delay Time 84 ns
Typical Turn-On Delay Time 22 ns Width 5.15 mm
Unit Weight 0.211644 oz

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