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STPSC2H12D

Diode 1200 V 2A Through Hole TO-220AC

Manufacturer: STMicroelectronics, Inc
Mfr.Part #: STPSC2H12D
Datasheet: STPSC2H12D Datasheet (PDF)
Series: ECOPACK®2
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 2A
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STPSC2H12D General Description

The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

Key Features

No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating T_j from -40 °C to 175 °C
Low V_F
ECOPACK^®2 compliant

Specifications

Category	Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes	Series	ECOPACK®2
Technology	SiC (Silicon Carbide) Schottky	Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	2A	Voltage - Forward (Vf) (Max) @ If	1.5 V @ 2 A
Speed	No Recovery Time > 500mA (Io)	Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	12 µA @ 1200 V	Capacitance @ Vr, F	190pF @ 0V, 1MHz
Mounting Type	Through Hole	Operating Temperature - Junction	-40°C ~ 175°C
Base Product Number	STPSC2	Pin Count	2
Released Date	Sep 9, 2022	Last Modified Date	Mar 7, 2023 4:10 PM UTC