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STP76NF75

N-channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

STP76NF75
Datasheet:

STP76NF75 Datasheet (PDF)
ECCN (US):

EAR99
ECCN (EU):

NEC
Packing Type:

Tube
Technology:

Si
EDA/CAD Models:

Request Free CAD Models for STP76NF75

Email: [email protected]

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Tel: +852 95804164

STP76NF75 General Description

This Power MOSFET is the latest development of STMicroelectronics unique \single feature size\ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Key Features

Exceptional dv/dt capability
100% avalanche tested

Specifications

Marketing Status	Active	ECCN (US)	EAR99
ECCN (EU)	NEC	Packing Type	Tube
Temperature (°C) min	-	Temperature (°C) max	-
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	75 V
Id - Continuous Drain Current	80 A	Rds On - Drain-Source Resistance	11 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	160 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	300 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	STripFET	Series	STP76NF75
Configuration	Single	Fall Time	30 ns
Height	9.15 mm	Length	10.4 mm
Product Type	MOSFET	Rise Time	100 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	66 ns
Typical Turn-On Delay Time	25 ns	Width	4.6 mm
Unit Weight	0.068784 oz