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STP5NK50Z

N-Channel 500 V 4.4A (Tc) 70W (Tc) Through Hole TO-220

Manufacturer:

ST
Mfr.Part #:

STP5NK50Z
Datasheet:

STP5NK50Z Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for STP5NK50Z

Email: [email protected]

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Tel: +852 95804164

STP5NK50Z General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Key Features

100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected

Application

SWITCHING

Specifications

Source Content uid	STP5NK50Z	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	50 Weeks
Avalanche Energy Rating (Eas)	130 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	Drain Current-Max (ID)	4.4 A
Drain-source On Resistance-Max	1.5 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	70 W	Pulsed Drain Current-Max (IDM)	17.6 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	500 V	Id - Continuous Drain Current	4.4 A
Rds On - Drain-Source Resistance	1.5 Ohms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	28 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	70 W	Channel Mode	Enhancement
Tradename	SuperMESH	Series	STP5NK50Z
Fall Time	15 ns	Forward Transconductance - Min	3.1 S
Height	9.15 mm	Length	10.4 mm
Product Type	MOSFET	Rise Time	10 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	32 ns	Typical Turn-On Delay Time	15 ns
Width	4.6 mm	Unit Weight	0.068784 oz