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STP2NK90Z

N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in a TO-220 package

Manufacturer:

ST
Mfr.Part #:

STP2NK90Z
Datasheet:

STP2NK90Z Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for STP2NK90Z

Email: [email protected]

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Tel: +852 95804164

STP2NK90Z General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Key Features

Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener-protected

Application

SWITCHING

Specifications

Source Content uid	STP2NK90Z	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	50 Weeks
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	150 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	900 V
Drain Current-Max (ID)	2.1 A	Drain-source On Resistance-Max	6.5 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	70 W
Pulsed Drain Current-Max (IDM)	8.4 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON